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Module 1: MEMS Overview

20267m

Describe the principle and process of photolithography used in MEMS fabrication.

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Photolithography in MEMS fabrication

Principle: a light-sensitive polymer (photoresist) is exposed to UV light through a patterned mask. Exposure changes the resist's solubility, so after development the mask pattern remains as a resist stencil on the substrate. The stencil then protects the surface during etching or deposition.

MermaidDiagram
Rendering diagram…

Process steps

  1. Cleaning: remove particles and organics, bake off moisture, add an adhesion promoter (HMDS) if needed.
  2. Spin coating: resist thickness is set by viscosity and spin speed.
  3. Soft bake: drives off solvent so the film is stable.
  4. Alignment and exposure: the mask is aligned to wafer marks and UV passes through its clear areas.
  5. Development: the developer dissolves the soluble regions.
  6. Hard bake: hardens the resist and improves etch resistance.
  7. Pattern transfer: etch the exposed film, or deposit and lift off.
  8. Resist strip: remove the remaining resist.

Positive and negative resist

Positive Negative
Exposed area Becomes soluble Becomes insoluble (cross-links)
Pattern Same as the mask Inverse of the mask
Resolution Higher Lower, but thick films possible
Example AZ and S1800 series SU-8

Resolution

Minimum feature size R ≈ k₁λ/NA for projection systems, so a shorter wavelength gives finer features.

Exam tip

Draw the step-by-step cross-section figure and label resist, mask, UV and substrate.

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