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Module 4: Memory Organization

20147m

Describe organization of a typical RAM chip. Differentiate between static RAM chip and dynamic RAM chip.

Worked SolutionAI Assisted

Solution - RAM Chip Organization & SRAM vs DRAM

A) Organization of a Typical RAM Chip:

A RAM chip of size 2k×m2^k \times m (e.g., 1024×81024 \times 8, 16K×116K \times 1) has:

  • Memory Array: Matrix of memory cells arranged in rows ×\times columns. For 1024×81024 \times 8, 8192 cells (128 rows ×\times 64 columns).
  • Address Decoder: kk address lines decoded to select one row/word. Row decoder selects row, column decoder selects bit group. Example: 10 lines for 1024 words (5 for row, 5 for column or 10 for row).
  • Memory Cells: Each cell stores 1 bit (flip-flop for SRAM, capacitor+transistor for DRAM).
  • Chip Select (CS) / Chip Enable (CE): Enables chip only when selected - allows building larger memories by combining chips.
  • Read/Write Control (RD/WR, WE, OE): W=0W=0 write enabled, W=1W=1 read.
  • Bidirectional Data Lines (I/O0..I/Om−1I/O_{0}..I/O_{m-1}): Input data for write, output for read - tri-state buffers. mm lines = word length.
  • Address Lines (A0..Ak−1A_0..A_{k-1}): Input address.

Construction of larger memory: Using chip select and address decoding. Eg., to make 2K×82K \times 8 from two 1K×81K \times 8 chips, A10A_{10} drives CS via decoder.

Block diagram: Address Lines -> Row/Column Decoder -> Memory Cell Array -> Sense Amplifiers / Write Drivers -> Data Lines. Control logic coordinates CS, OE, WE.

B) Difference between Static RAM (SRAM) and Dynamic RAM (DRAM):

Parameter Static RAM (SRAM) Dynamic RAM (DRAM)
Cell Design 6 transistors (bistable latch/flip-flop) 1 transistor + 1 capacitor (charge storage)
Storage Holds data as long as power on (static) Charge leaks, needs periodic refresh every ~2ms
Refresh Circuit Not needed Required (refresh controller, ROW strobing)
Density Low (6T per bit) High (1T per bit) - 4-5x denser
Speed Fast (access 1-10 ns, no refresh overhead) Slower (access 50-70 ns + refresh)
Power More power per cell, but no refresh power Less per cell, but refresh consumes power
Cost Costly per bit Cheap per bit
Use Cache (L1,L2,L3), fast buffers, registers Main memory (DDR SDRAM)
Volatility Volatile (like DRAM) Volatile

Summary: SRAM = speed, DRAM = density & cost-effectiveness for large memory.

Typical RAM Chip Pin Diagram: A0−A9A_0-A_9, D0−D7D_0-D_7, CS‾\overline{CS}, WE‾\overline{WE}, OE‾\overline{OE}, VccV_{cc}, GNDGND.

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