Semiconductors & Nano-materials (10hrs) · Engineering Physics

Photodiode

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Photodiode

1. What a Photodiode Is

Photodiode = p-n junction operated reverse biased to detect light by converting photons to current. When photon hν≥Eghν≥E_g hits depletion region, it creates electron-hole pair that is swept by built-in + applied field ⇒ photocurrent ∝ light intensity.

2. Structure and Bias

p  | depletion (intrinsic) | n   (PIN photodiode: p - i - n, i widens depletion for more absorption and speed)
Reverse bias widens depletion ⇒ larger collection volume, lower capacitance ⇒ faster.
Operation quadrants: 3rd quadrant (reverse bias) for photoconductive mode (fast, linear); 4th quadrant (zero bias) photovoltaic mode (solar cell).

3. Characteristics (exam graph)

  • I-V: in dark, diode reverse leakage tiny (I0I_0); under illumination, curve shifts down by photocurrent Ip=ηeP/hνI_p = η e P/hν (linear with power PP, quantum efficiency ηη).
I=I0(eeV/kT−1)−IpI = I_0 (e^{eV/kT}-1) - I_p

in illuminated. At reverse bias V<0V<0, I≈−IpI≈ -I_p (current magnitude light-dependent).

4. Figures of Merit

  • Responsivity
R=Ip/P=ηe/(hν)=ηλ(µm)/1.24R = I_p/P = η e/(hν) = η λ(µm)/1.24

A/W (e.g., Si at 800 nm, η=0.8 ⇒ R≈0.52 A/W).

  • Quantum efficiency ηη = electrons per photon.
  • Response time set by RCRC and drift transit across depletion.

5. Uses

Light detection for fibre receivers (850/1300/1550 nm InGaAs), light meters, barcode readers, flame sensors.

6. Exam Points

  • Draw structure (p-i-n) and band diagram with photon absorption — 5 marks, frequent.
  • I-V characteristic shift under illumination — 5 marks, very frequent.
  • Explain photocurrent ∝ intensity and reverse bias operation — 5 marks, frequent.
  • Formula R=ηe/hνR=η e/hν — 3 marks.
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